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TSOP6930 Просмотр технического описания (PDF) - Vaishali Semiconductor

Номер в каталоге
Компоненты Описание
производитель
TSOP6930
VAISH
Vaishali Semiconductor VAISH
TSOP6930 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
VISHAY
TSOP69..
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Ee
Optical Test Signal
(IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms)
t
tpi *)
T
*) tpi w 6/fo is recommended for optimal function
Output Signal
VO
1 ) 3/f0 < td < 9/f0
VOH
2 ) tpi – 4/f0 < tpo < tpi + 6/f0
14337
VOL td1 )
tpo2 )
t
Figure 1. Output Function
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
16910
Ton
Toff
l = 950 nm,
optical test signal, fig.3
1.0 10.0 100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
Figure 4. Output Pulse Diagram
0.35
0.30
Output Pulse
0.25
0.20
0.15
0.10
0.05
0.00
0.1
16907
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
1.0 10.0 100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Optical Test Signal
Ee
600 ms
T = 60 ms
600 ms
Output Signal, ( see Fig.4 )
VO
VOH
VOL
Ton
Toff
t
94 8134
t
Figure 3. Output Function
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.7
16926
f = f0"5%
Df ( 3dB ) = f0/7
0.9
1.1
1.3
f/f0 – Relative Frequency
Figure 5. Frequency Dependence of Responsivity
4.0
3.5
Correlation with ambient light sources:
10W/m2^1.4klx (Std.illum.A,T=2855K)
3.0
10W/m2^8.2klx (Daylight,T=5900K)
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01
16911
0.10
1.00 10.00 100.00
E – Ambient DC Irradiance (W/m2)
Figure 6. Sensitivity in Bright Ambient
Document Number 84687
Rev. 1.0, 01-Mar-05
www.vishay.com
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