SI9978 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI9978 Datasheet PDF : 8 Pages
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Si9978
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltage on pins 2−7 with respect to ground . . . . . . . . . . . −0.3 to VDD + 0.3 V
Voltage on pin 24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to 50 V
Voltage on pins 17, 19, 21, 23 . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 to +60 V
Voltage on pins 18, 22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −2 to 50 V
RECOMMENDED OPERATING CONDITIONS
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20 to 40 VDC
RA, RB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 kW
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to +85_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
SPECIFICATIONS
Parameter
Power
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 20 to 40 V
Mina
Limits
−40 to 85_C
Typb
Supply Voltage Range
V+
Logic Voltage
VDD
Supply Current
I+
Inputs (DIR, PWM, EN, QS, MODE, BRK)
IDD = 0 mA
20
14.5
16
3
High-State
VIH
Low-State
VIL
High-State Input Current
IIH
Low-State Input Current
IIL
Outputs
VIH = VDD
VIL = 0 V
4.0
−100
−50
Low-Side Gate Drive, High State
Low-Side Gate Drive, Low State
High-Side Gate Drive, High State
High-Side Gate Drive, Low State
Low-Side Switching, Rise Time
Low-Side Switching, Fall Time
High-Side Switching, Rise Time
High-Side Switching, Fall Time
Break-Before-Make Time
FAULT, CL
FAULT, CL Leakage Current
Protection
VGBH
VGBL
VGTH
VGTL
trL
tfL
trH
tfH
VOL
IOH
SA, B = 0 V
Rise Time = 1 to 10 V
Fall Time = 10 to 1 V
CL = 600 pF
IOL = 1 mA
FAULT, CL = VDD
14
16
14
16
110
50
110
50
250
0.2
Low-Side Undervoltage Lockout
Low-Side Hysteresis
High-Side Undervoltage Lockout
Current Limit
UVLL
VH
UVLH
SA, B = 0 V
0.8 VDD
0.8
VDD−3.3 V
Comparator Input Bias Current
IIB
Comparator Threshold Voltage
VTH
TA = 25_C
−5
−0.2
90
100
85
One Shot Pulse Width
Propagation Delay
RA, RB = 100 kW, CA, CB = 100 pF
8
10
tp
RA, RB = 100 kW, CA, CB = 0.001 mF
80
100
tpd
CL = 600 pF
600
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Maxa
40
17.5
5
1.0
10
−25
17.5
1
18
1
0.4
10
5
110
115
12
120
Unit
V
mA
V
mA
V
ns
V
mA
V
mA
mV
ms
ns
www.vishay.com
2
Document Number: 70011
S-40804—Rev. E, 26-Apr-04
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