MJD32CT4(2007) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

MJD32CT4
(Rev.:2007)

Low voltage PNP power transistor

STMicroelectronics 

MJD32C

2

Electrical characteristics

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 3. Electrical characteristics

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

VCE =-100V

ICEO

Collector cut-off current

(IB = 0)

VCB =-60V

IEBO

Emitter cut-off current

(IC = 0)

VEB =-5V

Collector-emitter

VCEO(sus) (1) sustaining voltage

(IB = 0)

IC =-30mA

VCE(sat) (1)

Collector-emitter

saturation voltage

IC =-3A _

VBE(on) (1) Base-emitter on voltage IC =-3A _

hFE

DC current gain

IC =-1A

IC = -3A

1. Note (1) Pulsed duration = 300 ms, duty cycle £1.5%

-100

IB =-375mA

VCE=-4V

VCE =-4V 25

VCE =-4V 10

-20 µA

-50 µA

-0.1 mA

V

-1.2 V

-1.8 V

50

2.1

Electrical characteristic (curves)

Figure 2. Safe operating area

Figure 3. Derating curve

3/9

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