2N3055 Просмотр технического описания (PDF) - Central Semiconductor
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2N3055 Datasheet PDF : 3 Pages
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2N3055 NPN
MJ2955 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3055 and
MJ2955 are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a hermetically sealed metal case, designed for
general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
100
70
60
7.0
15
7.0
115
-65 to +200
1.52
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=100V, VEB=1.5V
ICEV
VCE=100V, VEB=1.5V, TC=150°C
ICEO
VCE=30V
IEBO
VEB=7.0V
BVCEO
IC=200mA
60
BVCER
IC=200mA, RBE=100Ω
70
VCE(SAT) IC=4.0A, IB=400mA
VCE(SAT) IC=10A, IB=3.3A
VBE(ON)
VCE=4.0V, IC=4.0A
hFE
VCE=4.0V, IC=4.0A
20
hFE
VCE=4.0V, IC=10A
5.0
hfe
VCE=4.0V, IC=1.0A, f=1.0kHz
15
fT
VCE=10V, IC=0.5A, f=1.0MHz
2.5
fhfe
VCE=4.0V, IC=1.0A, f=1.0kHz
10
Is/b
VCE=40V, t=1.0s
2.87
MAX
1.0
5.0
0.7
5.0
1.1
3.0
1.5
70
120
UNITS
V
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
MHz
kHz
A
R1 (26-July 2013)
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