2N3055AG Просмотр технического описания (PDF) - ON Semiconductor
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2N3055AG Datasheet PDF : 6 Pages
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2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
NPN
10,000
1000
VCE = 30 V
COLLECTOR CUT−OFF REGION
PNP
1000
VCE = 30 V
100
100
TJ = 150°C
10
100°C
1.0
0.1 REVERSE
IC = ICES
FORWARD
25°C
0.01
+ 0.2 + 0.1
0
- 0.1 - 0.2 - 0.3 - 0.4 - 0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015
20
30 ms
10
100 ms
1 ms
5
BONDING WIRE LIMIT
2
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
1
10
20
60
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Forward Bias Safe Operating Area
2N3055A
10 TJ = 150°C
1.0
100°C
0.1
REVERSE
0.01
25°C
IC = ICES
FORWARD
0.001
- 0.2
20
10
- 0.1
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. MJ15016
0.1 ms
5.0
1.0 ms
2.0
1.0
0.5
0.2
15
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
100 ms
dc
20
30
60
100 120
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Forward Bias Safe Operating Area
MJ15015, MJ15016
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe Operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 12 and 13 is based on TC = 25_C;
TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated for temperature according to Figure 1.
ORDERING INFORMATION
Device
2N3055AG
MJ15015G
MJ15016G
Package
TO−204
(Pb−Free)
TO−204
(Pb−Free)
TO−204
(Pb−Free)
http://onsemi.com
5
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