2N3055AG(2006) Просмотр технического описания (PDF) - ON Semiconductor
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2N3055AG Datasheet PDF : 6 Pages
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2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)
200
150
MJ15015
MJ15016
100
50
2N3055A
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
200
100
70
50
30
20
10
7
5
3
2
0.2
TJ = 150°C
−55 °C
VCE = 4.0 V
25°C
0.3 0.5 0.7 1
2 3 5 7 10 15
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
2.8
TJ = 25°C
2.4
2
1.6
IC = 1 A
4A
8A
1.2
0.8
0.4
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2
5
IB, BASE CURRENT (AMP)
Figure 3. Collector Saturation Region
3.5
TC = 25°C
3
2.5
2
1.5
VBE(sat) @ IC/IB = 10
1
0.5
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1
2 3 5 7 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
10
5.0
MJ15016
2.0
2N3055A
MJ15015
1.0
0.1
0.2 0.3
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Current−Gain — Bandwidth Product
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