2N5884 Просмотр технического описания (PDF) - STMicroelectronics
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2N5884 Datasheet PDF : 4 Pages
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2N5884 / 2N5886
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.875
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = rated VCEO
VCE = rated VCEO Tc = 150 oC
ICBO
Collector Cut-off
Current (IE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VCE = rated VCBO
VCE = 40 V
VEB = 5 V
IC = 200 mA
VCE(sat)∗
VBE(sat)∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IC = 15 A
IC = 25 A
IC = 25 A
IB = 1.5 A
IB = 6.25 A
IB = 6.25 A
VBE∗ Base-Emitter Voltage IC = 10 A
VCE = 4 V
hFE∗ DC Current Gain
IC = 3 A
IC = 10 A
IC = 25 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
hfe
Small Signal Current IC = 3 A VCE = 4 V f = 1KHz
Gain
fT
Transition frequency IC = 1 A VCE = 10 V f =1 MHz
CCBO
Collector Base
Capacitance
IE = 0 VCB = 10 V
for NPN type
for PNP type
f = 1MHz
tr
Rise Time
ts
Storage Time
IC = 10 A VCC = 30 V
IB1 = -IB2 = 1A
tf
Fall Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
80
35
20
4
20
4
Max.
1
10
1
2
1
1
4
2.5
1.5
100
500
1000
0.7
1
0.8
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
MHz
pF
pF
µs
µs
µs
2/4
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