2N5884 Просмотр технического описания (PDF) - STMicroelectronics

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2N5884

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

STMicroelectronics 

2N5884

2N5886

COMPLEMENTARY SILICON

HIGH POWER TRANSISTORS

s SGS-THOMSON PREFERRED SALESTYPES

s COMPLEMENTARY PNP - NPN DEVICES

s HIGH CURRENT CAPABILITY

APPLICATIONS

s GENERAL PURPOSE SWITCHING AND

AMPLIFIER

s LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The 2N5884 and 2N5886 are complementary

silicon power transistor in Jedec TO-3 metal case

inteded for use in power linear amplifiers and

switching applications.

1

2

TO-3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCBO Collector-Base Voltage (IE = 0)

VCEO Collector-Emitter Voltage (IB = 0)

VEBO Emitter-Base Voltage (IC = 0)

IC

Collector Current

ICM Collector Peak Current

IB

Base Current

Ptot Total Dissipation at Tc ≤ 25 oC

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

For PNP types voltage and current values are negative.

June 1997

PNP

NPN

Value

2N5884

2N5886

80

80

5

25

50

7.5

200

-65 to 200

200

Unit

V

V

V

A

A

A

W

oC

oC

1/4

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