NJVMJD45H11G(2013) Просмотр технического описания (PDF) - ON Semiconductor
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NJVMJD45H11G Datasheet PDF : 8 Pages
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MJD44H11 (NPN), MJD45H11 (PNP)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case
RqJC
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
Lead Temperature for Soldering
TL
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
VCEO(sus)
80
−
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
−
−
Emitter Cutoff Current
(VEB = 5 Vdc)
IEBO
−
−
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.4 Adc)
VCE(sat)
−
−
Base−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
VBE(sat)
−
−
DC Current Gain
(VCE = 1 Vdc, IC = 2 Adc)
(VCE = 1 Vdc, IC = 4 Adc)
hFE
60
−
40
−
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 Mhz)
MJD44H11, NJVMJD44H11G/T4G/RLG
MJD45H11, NJVMJD45H11G/T4G/RLG
Ccb
−
45
−
130
Gain Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz)
MJD44H11, NJVMJD44H11G/T4G/RLG
MJD45H11, NJVMJD45H11G/T4G/RLG
fT
−
85
−
90
SWITCHING TIMES
Delay and Rise Times
(IC = 5 Adc, IB1 = 0.5 Adc)
MJD44H11, NJVMJD44H11G/T4G/RLG
MJD45H11, NJVMJD45H11G/T4G/RLG
td + tr
−
300
−
135
Storage Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11, NJVMJD44H11G/T4G/RLG
MJD45H11, NJVMJD45H11G/T4G/RLG
ts
−
500
−
500
Fall Time
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11, NJVMJD44H11G/T4G/RLG
MJD45H11, NJVMJD45H11G/T4G/RLG
tf
−
140
−
100
Max
6.25
71.4
260
Max
−
1.0
1.0
1
1.5
−
−
−
−
−
−
−
−
−
−
−
−
Unit
°C/W
°C/W
°C
Unit
Vdc
mA
mA
Vdc
Vdc
−
pF
MHz
ns
ns
ns
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