BD788 Просмотр технического описания (PDF) - ON Semiconductor
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BD788 Datasheet PDF : 6 Pages
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BD787 − NPN, BD788 − PNP
10
1.0 ms
5.0
2.0
5.0 ms
100 ms
500 ms
1.0
TJ = 150°C
dc
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
0.1
(SINGLE PULSE)
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.02
BD787 (NPN) BD788 (PNP)
0.01
1.0
2.0 3.0 5.0 7.0 10
20 30
60 V
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2000
1000
ts
700
500
300
200
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
100
tf
70
50
(NPN)
30
(PNP)
20
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn−Off Time
200
100
70
50
30
20
10
1.0
TJ = 25°C
Cib
Cob
(NPN)
(PNP)
2.0 3.0 5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 70 100
NPN
BD787
400
300
TJ = 150°C
200
25°C
100
−55 °C
70
50
30
VCE = 1.0 V
VCE = 3.0 V
NPN
BD788
200
100
TJ = 150°C
70
25°C
50
−55 °C
30
20
VCE = 1.0 V
VCE = 3.0 V
20
0.04 0.06 0.1 0.2
0.4 0.6 1.0 2.0
4.0
10
0.04 0.06 0.1
0.2
0.4 0.6 1.0 2.0
4.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
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