TPCS8205(2003) Просмотр технического описания (PDF) - Toshiba
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Компоненты Описание
производитель
TPCS8205 Datasheet PDF : 7 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
V (BR) DSX
Vth
RDS (ON)
RDS (ON)
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±10 V, VDS = 0 V
VDS = 20 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −12 V
VDS = 10 V, ID = 200 µA
VGS = 2.0 V, ID = 3.5 A
VGS = 2.5 V, ID = 3.5 A
VGS = 4 V, ID = 4 A
VDS = 10 V, ID = 2.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Turn-ON time
ton
Switching time
Fall time
tf
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
toff
Qg
Qgs
VDD ≈ 16 V, VGS = 5 V, ID = 5 A
Qgd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
IDRP
VDSF
Test Condition
—
IDR = 5 A, VGS = 0 V
TPCS8205
Min Typ. Max Unit
¾
¾
±10
µA
¾
¾
10
µA
20
¾
¾
V
8
¾
¾
0.5
¾
1.2
V
¾
60
90
¾
40
60
mΩ
¾
30
45
5
10
¾
S
¾
760
¾
pF
¾
110
¾
pF
¾
130
¾
pF
¾
7
¾
¾
13
¾
ns
¾
13
¾
¾
49
¾
¾
11
¾
nC
¾
8
¾
nC
¾
3
¾
nC
Min Typ. Max Unit
—
—
20
A
—
— −1.2
V
3
2003-02-20
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