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TPC8120 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TPC8120
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
Toshiba
TPC8120 Datasheet PDF : 7 Pages
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TPC8120
r
th
−
t
w
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
100
10
1
0.1
0.001
0.01
0.1
1
10
Pulse width t
w
(S)
(2)
(1)
Single pulse
100
1000
Safe operating area
−
100
ID max (pulse)
*
1 ms
*
−
10
t = 10 ms
*
−
1
*
Single pulse
Ta
=
25°C
Curves must be derated
linearly with increase in
temperature.
−
0.1
−
0.1
−
1
VDSS max
−
10
Drain-source voltage V
DS
(V)
−
100
6
2009-07-27
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