TPC8120
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯ ±100 nA
IDSS
VDS = −30 V, VGS = 0 V
⎯
⎯
−10
μA
V (BR) DSS ID = −10 mA, VGS = 0 V
−30 ⎯
⎯
V
V (BR) DSX ID = −10 mA, VGS = 10V (Note 7)
−21
⎯
⎯
Vth
VDS = −10 V, ID = −1 mA
−0.8 ⎯
−2.0
V
RDS (ON)
VGS = −4.5 V, ID = −9 A
VGS = −10 V, ID = −9 A
⎯
3.3
4.2
mΩ
⎯
2.6
3.2
|Yfs|
VDS = −10 V, ID = −9 A
40
80
⎯
S
Ciss
⎯ 7420 ⎯
Crss
VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1180 ⎯
pF
Coss
⎯ 1440 ⎯
tr
0V
VGS
−10 V
ton
tf
ID = −9 A
⎯
10
⎯
出力
⎯
18
⎯
ns
⎯
275
⎯
VDD ≈ −15 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
790
⎯
Qg
Qgs1
Qgd
VDD ≈ −24 V, VGS = −10 V,
ID = −18 A
⎯
180
⎯
⎯
20
⎯
nC
⎯
40
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse
Forward voltage (diode)
(Note 1)
Symbol
Test Condition
IDRP
VDSF
⎯
IDR = −18 A, VGS = 0 V
Min Typ. Max Unit
⎯
⎯
−72
A
⎯
⎯
1.2
V
Note 7: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum rating
of drain-source voltage.
3
2009-07-27