TPC8120 Просмотр технического описания (PDF) - Toshiba

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TPC8120

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)

Toshiba 

Thermal Characteristics

Characteristics

Symbol

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a)

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

Rth (ch-a)

Rth (ch-a)

Max

65.8

125

Unit

°C/W

°C/W

TPC8120

Marking (Note 5)

TPC8120

Part No.

(or abbreviation code)

Lot No.

(weekly code)

Note 6

Note 6: A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

(b)

Note 3: VDD = −24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = −18 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: • on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture

(01 for the first week of a year: sequential number up to 52 or 53)

Year of manufacture

(The last digit of a year)

2

2009-07-27

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