TLP722(2002) Просмотр технического описания (PDF) - Toshiba

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производитель

TLP722
(Rev.:2002)

TOSHIBA Photocoupler Photo−Diode

Toshiba 

TENTATIVE

TOSHIBA Photocoupler Photo−Diode

TLP722

TLP722

The TOSHIBA TLP722 consists of a photo−diode optically coupled to a

gallium arsenide infrared emitting diode in a four lead plastic DIP

(DIP4).

TLP722: Single circuit

· Cathode−anode voltage: 30V (max)

· Current transfer ratio: 0.1% (min)

· Input / output isolation voltage: 4000Vrms (min)

· Operating temperature range: −55~100°C

· Storage temperature range: −55~125°C

· UL recognized: UL1577, E67349

· VDE approved: VDE0884

Maximum operating insulation voltage: 890VPK

Maximum permissible over voltage: 8000VPK

(Note): When a VDE0884 approved type is needed,

please designate the “ Option (D4) ”

· SEMKO approved product: SS EN60950,

approved No. 9808324 / 01

· Construction mechanical rating

Creepage distance

Clearance

Insulation thickness

TLP722 type

7.0 mm

7.0 mm

0.4 mm

TLP722F type

8.0 mm

8.0 mm

0.4 mm

Unit in mm

TOSHIBA

Weight: 0.28 g

11−5B2

Pin Configuration

(top view)

1

2002-09-25

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