TLP631 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

TLP631

Photocoupler GaAs IRed & Photo−Transistor

Toshiba 

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Reverse current

Capacitance

Collector−emitter breakdown

voltage

Emitter−collector breakdown

voltage

Collector−base breakdown

voltage

(TLP631)

Emitter−base breakdown

voltage

(TLP631)

Collector dark current

Capacitance collector to

emitter

Symbol

Test Condition

VF

IF = 10 mA

IR

VR = 5V

CT

V = 0, f = 1 MHz

V(BR) CEO IC = 0.5 mA

V(BR) ECO IE = 0.1 mA

V(BR) CBO IC = 0.1 mA

V(BR) EBO IE = 0.1 mA

ICEO

CCE

VCE = 24 V

VCE = 24 V, Ta = 85°C

V = 0, f = 1 MHz

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Saturated CTR

Collector−emitter saturation

voltage

Symbol

Test Condition

IC / IF

IF = 5 mA, VCE = 5 V

Rank GB

IC / IF (sat)

IF = 1 mA, VCE = 0.4 V

Rank GB

VCE (sat) IC = 2.4 mA, IF = 8 mA

TLP631,TLP632

Min. Typ. Max. Unit

1.0 1.15 1.3

V

―

―

10

μA

―

30

―

pF

55

―

―

V

7

―

―

V

80

―

―

V

7

―

―

V

―

10 100 nA

―

2

50

μA

―

10

―

pF

MIn. Typ. Max. Unit

50

―

600

%

100

―

600

―

60

―

%

30

―

―

―

―

0.4

V

3

2007-10-01

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