TLP632 Просмотр технического описания (PDF) - Toshiba

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производитель

TLP632

Photocoupler GaAs IRed & Photo−Transistor

Toshiba 

TLP631,TLP632

TOSHIBA Photocoupler GaAs IRed & Photo−Transistor

TLP631,TLP632

Programmable Controllers

AC / DC−Input Module

Solid State Relay

Unit in mm

The TOSHIBA TLP631 and TLP632 consist of a photo−transistor

optically coupled to a gallium arsenide infrared emitting diode in a

six lead plastic DIP.

TLP632 is no−base internal connection for high−EMI environments.

• Collector−emitter voltage: 55 V (min.)

• Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

• Isolation voltage: 5000Vrms (min.)

• UL recognized: UL1577, file no. E67349

Pin Configurations (top view)

TLP631

TLP632

1

61

6

2

52

5

3

43

4

1: Anode

2: Cathode

3: N.C.

4: Emitter

5: Collector

6: Base

1: Anode

2: Cathode

3: N.C.

4: Emitter

5: Collector

6: N.C

TOSHIBA

Weight: 0.4 g

11−7A8

1

2007-10-01

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