TLP629(2002) Просмотр технического описания (PDF) - Toshiba

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производитель

TLP629
(Rev.:2002)

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

TLP629,TLP629−2,TLP629−4

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Forward current

Reverse current

Capacitance

Collector-emitter

breakdown voltage

Emitter-collector

breakdown voltage

Collector dark current

Capacitance collector to emitter

Symbol

Test Condition

VF

IF = 100 mA

IF

VF = 0.7 V

IR

VR = 5 V

CT

V = 0, f = 1 MHz

V(BR) CEO IC = 0.5 mA

V(BR) ECO IE = 0.1 mA

ICEO

CCE

VCE = 24 V

VCE = 24 V, Ta = 85°C

V = 0, f = 1 MHz

Min. Typ. Max. Unit

—

1.4

1.7

V

—

2.5

20

µA

—

—

10

µA

—

50

—

pF

55

—

—

V

7

—

—

V

—

10

100

nA

—

2

50

µA

—

10

—

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Collector-emitter saturation voltage

Off-state collector current

Symbol

IC / IF

IC / IF

(high)

VCE (sat)

IC(off)

Test Condition

IF = 20 mA, VCE = 1 V

IF = 100 mA, VCE = 1 V

IC = 2.4 mA, IF = 20 mA

IC = 2.4 mA, IF = 100 mA

VF = 0.7V, VCEO = 24 V

MIn. Typ. Max. Unit

25

—

—

%

20

—

80

—

—

0.4

V

—

—

0.4

—

1

1.0

µA

Isolation Characteristics (Ta = 25°C)

Characteristic

Capacitance input to output

Isolation resistance

Isolation voltage

Symbol

CS

RS

BVS

Test Condition

VS = 0, f = 1 MHz

VS = 500 V

AC, 1 minute

AC, 1 second, in oil

DC, 1 minute, in oil

Min. Typ. Max. Unit

—

0.8

—

5×1010 1014

—

5000 —

—

— 10000 —

— 10000 —

pF

Ω

Vrms

Vdc

3

2002-09-25

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