TLP3220 Просмотр технического описания (PDF) - Toshiba
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TLP3220 Datasheet PDF : 7 Pages
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Absolute Maximum Ratings (Ta = 25°C)
TLP3220
Characteristic
Forward current
Forward current derating (Ta≥25°C)
Reverse voltage
Diode power dissipation
Diode power dissipation derating (Ta >25°C)
Junction temperature
Off-State output terminal voltage
On-State current
On-State current derating (Ta≥25°C)
Output power dissipation
Output power dissipation derating (Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 60 s, R.H.≤ 60 %) (Note 1)
Symbol
IF
∆IF/°C
VR
PD
△PD /°C
Tj
VOFF
ION
∆ION/°C
PO
ΔPO / °C
Tj
Tstg
Topr
Tsol
BVS
Rating
50
−0.5
5
50
-0.5
125
100
80
−0.8
96
−0.96
125
−40 to 125
−20 to 85
260
1500
Unit
mA
mA/°C
V
mW
mW/°C
°C
V
mA
mA/°C
mW
mW / °C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
Precautions
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Operating temperature
Symbol
VDD
IF
Topr
Min Typ. Max Unit
―
―
80
V
10
―
30
mA
25
―
60
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Off-state current
Capacitance
Symbol
VF
IR
CT
IOFF
COFF
Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
VOFF = 80 V
VOFF = 100 V
V = 0 V, f = 100 MHz, t < 1 s
Min
Typ.
Max Unit
1.0
1.15
1.3
V
―
―
10
μA
―
15
―
pF
―
―
200
pA
1
μA
―
6
8
pF
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24
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