TLP227A(2019) Просмотр технического описания (PDF) - Toshiba
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TLP227A Datasheet PDF : 6 Pages
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Absolute Maximum Ratings (Ta = 25°C)
TLP227A,TLP227A-2
Characteristics
Forward Current
Forward Current Derating (Ta ≥ 25°C)
Peak Forward Current (100 μs pulse, 100 pps)
Reverse Voltage
Diode Power Dissipation
Symbol
IF
∆IF/°C
IFP
VR
PD
Rating
50
-0.5
1
5
50
Unit
mA
mA/°C
A
V
mW
Diode Power Dissipation Derating (Ta ≥ 25°C)
△PD /°C
-0.5
mW/°C
Junction Temperature
Off-State Output Terminal Voltage
Tj
VOFF
125
°C
60
V
On-State Current
ION
500
mA
On-State Current Derating (Ta ≥ 25°C)
∆ION/°C
-5.0
mA/°C
Output Power Dissipation
PO
450
mW
Output Power Dissipation Derating (Ta ≥ 25°C)
ΔPO / °C
-4.5
mW / °C
Junction Temperature
Tj
125
°C
Storage Temperature Range
Tstg
-55 to 125
°C
Operating Temperature Range
Topr
-40 to 85
°C
Lead Soldering Temperature (10 s)
Tsol
260
°C
Isolation Voltage (AC, 60 s, R.H. ≤ 60 %)
(Note 1)
BVS
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two-terminal device : LED side pins shorted together, and DETECTOR side pins shorted
together.
Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Supply Voltage
VDD
―
―
48
V
Forward Current
IF
5
7.5
25
mA
On-State Current
ION
―
―
400 mA
Operating Temperature
Topr
-20
―
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product,
please confirm specified characteristics shown in this document.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward Voltage
Reverse Current
Capacitance
Symbol
VF
IR
CT
Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
Off-State Current
IOFF
VOFF = 60 V
Min Typ. Max Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
―
―
1
μA
Capacitance
COFF
V = 0 V, f = 1 MHz
―
130
―
pF
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-17
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