TLOH1100B(T11) Просмотр технического описания (PDF) - Toshiba
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TLOH1100B(T11) Datasheet PDF : 13 Pages
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TL(RH,RMH,SH,OH,YH)1100B(T11)
Absolute Maximum Ratings (Ta = 25°C)
Part Number
TLRH1100B
TLRMH1100B
TLSH1100B
TLOH1100B
TLYH1100B
Forward Current
IF (mA)
See Note 1
Reverse Voltage Power Dissipation
VR (V)
PD (mW)
70
4
161
Operation
Temperature
Topr (°C)
−40 to 110
Storage
Temperature
Tstg (°C)
−40 to 110
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Forward current derating
IF – Ta
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C))
Electrical Characteristics (Ta = 25°C)
Part Number
TLRH1100B
TLRMH1100B
TLSH1100B
TLOH1100B
TLYH1100B
Unit
Forward Voltage VF
Min Typ. Max
IF
1.6
1.9
2.3
1.6
1.9
2.3
1.6
1.9
2.3
20
1.6
2.0
2.3
1.6
2.0
2.3
V
mA
Reverse Current
IR
Max
VR
10
4
μA
V
2
2008-05-22
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