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TLN115AF Просмотр технического описания (PDF) - Toshiba

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TLN115AF Datasheet PDF : 6 Pages
1 2 3 4 5 6
TOSHIBA Infrared LED GaAs Infrared Emitter
TLN115A(F)
TLN115A(F)
Lead(Pb)-Free
Remotecontrol Systems
Unit: mm
High radiant intensity: IE = 26mW / sr (typ.)
Wide halfangle value: θ1/2 = ±21° (typ.)
Excellent radiantintensity linearity. Modulation by pulse operation
and high frequency is possible.
TPS703(F) pin photodiode with resin to screen out visible light
available as detector for remote control
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
100
mA
Forward current derating
(Ta > 25°C)
ΔIF / °C
1.33
mA / °C
Pulse forward current
(Note 1)
IFP
1
A
Reverse voltage
VR
5
V
Power dissipation
Operating temperature range
Storage temperature range
PD
150
mW
Topr
20~75
°C
Tstg
30~85
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width 100 μs, repetitive frequency = 100 Hz
TOSHIBA
46B6
Weight: 0.3 g (typ.)
Pin Connection
1. Anode
1
2 2. Cathode
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Radiant intensity
Radiant power
Capacitance
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
VF
IR
IE
PO
CT
λP
Δλ
θ1
2
Test Condition
IF = 100 mA
VR = 5 V
IF = 50 mA
TLN115A (F)
TLN115A (B,F)
IF = 50 mA
VR = 0, f = 1 MHz
IF = 50 mA
IF = 50 mA
IF = 50 mA
Min Typ. Max Unit
— 1.35 1.5
V
10
μA
15
26
mW / sr
19
13
mW
20
pF
— 950 —
nm
50
nm
±21
°
1
2007-10-01

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