TOSHIBA Infrared LED GaAs Infrared Emitter
TLN115A(F)
TLN115A(F)
Lead(Pb)-Free
Remote−control Systems
Unit: mm
• High radiant intensity: IE = 26mW / sr (typ.)
• Wide half−angle value: θ1/2 = ±21° (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
• TPS703(F) pin photodiode with resin to screen out visible light
available as detector for remote control
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
100
mA
Forward current derating
(Ta > 25°C)
ΔIF / °C
−1.33
mA / °C
Pulse forward current
(Note 1)
IFP
1
A
Reverse voltage
VR
5
V
Power dissipation
Operating temperature range
Storage temperature range
PD
150
mW
Topr
−20~75
°C
Tstg
−30~85
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width ≦ 100 μs, repetitive frequency = 100 Hz
TOSHIBA
4−6B6
Weight: 0.3 g (typ.)
Pin Connection
1. Anode
1
2 2. Cathode
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Radiant intensity
Radiant power
Capacitance
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
VF
IR
IE
PO
CT
λP
Δλ
θ1
2
Test Condition
IF = 100 mA
VR = 5 V
IF = 50 mA
TLN115A (F)
TLN115A (B,F)
IF = 50 mA
VR = 0, f = 1 MHz
IF = 50 mA
IF = 50 mA
IF = 50 mA
Min Typ. Max Unit
— 1.35 1.5
V
—
—
10
μA
15
26
—
mW / sr
19
—
—
—
13
—
mW
—
20
—
pF
— 950 —
nm
—
50
—
nm
—
±21
—
°
1
2007-10-01