MBM29LV200BC Просмотр технического описания (PDF) - Fujitsu

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MBM29LV200BC

FLASH MEMORY CMOS 2M (256K × 8/128K × 16) BIT

Fujitsu 

MBM29LV200TC-70/-90/-12/MBM29LV200BC-70/-90/-12

s FLEXIBLE SECTOR-ERASE ARCHITECTURE

• One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes

• Individual-sector, multiple-sector, or bulk-erase capability

• Individual or multiple-sector protection is user definable.

(×8)

(×16)

(×8)

(×16)

16K byte

8K byte

8K byte

32K byte

64K byte

64K byte

64K byte

3FFFFH 1FFFFH

3BFFFH 1DFFFH

39FFFH 1CFFFH

37FFFH 1BFFFH

2FFFFH 17FFFH

1FFFFH 0FFFFH

0FFFFH 07FFFH

00000H 00000H

MBM29LV200TC Sector Architecture

64K byte

64K byte

64K byte

32K byte

8K byte

8K byte

16K byte

3FFFFH 1FFFFH

2FFFFH 17FFFH

1FFFFH 0FFFFH

0FFFFH 07FFFH

07FFFH 03FFFH

05FFFH 02FFFH

03FFFH 01FFFH

00000H 00000H

MBM29LV200BC Sector Architecture

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