TK31A60W Просмотр технического описания (PDF) - Toshiba

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TK31A60W

MOSFETs Silicon N-Channel MOS (DTMOSIV)

Toshiba 

TK31A60W

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

Storage temperature

Isolation voltage (RMS)

Mounting torque

(Tc = 25)

(t = 1.0 s)

(Note 1)

(Note 1)

(Note 2)

(Note 1)

(Note 1)

VDSS

VGSS

ID

IDP

PD

EAS

IAR

IDR

IDRP

Tch

Tstg

VISO(RMS)

TOR

600

±30

30.8

123

45

437

7.7

30.8

123

150

-55 to 150

2000

0.6

V

A

W

mJ

A



V

Nm

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25 (initial), L = 12.9 mH, RG = 25 Ω, IAR = 7.7 A

Symbol

Rth(ch-c)

Rth(ch-a)

Max

Unit

2.78

/W

62.5

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2012-08-14

Rev.1.0

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