TJA1029 Просмотр технического описания (PDF) - NXP Semiconductors.
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TJA1029 Datasheet PDF : 24 Pages
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NXP Semiconductors
TJA1029
LIN 2.2A/SAE J2602 transceiver with TXD dominant timeout
10. Static characteristics
Table 7. Static characteristics
VBAT = 5 V to 18 V; Tvj = 40 C to +150 C; RL(LIN-VBAT) = 500 ; all voltages are referenced to pin GND; positive currents
flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply
VBAT
IBAT
battery supply voltage
battery supply current
Undervoltage reset
Sleep mode; bus recessive;
VLIN = VBAT; VSLP_N = 0 V
Sleep mode; bus dominant;
VLIN = 0 V; VBAT = 12 V;
VSLP_N = 0 V
Standby mode; bus recessive;
VLIN = VBAT; VSLP_N = 0 V
Standby mode; bus dominant;
VLIN = 0 V; VBAT = 12 V;
VSLP_N = 0 V
Normal mode; bus recessive;
VLIN = VBAT; VSLP_N = 5 V;
VTXD = 5 V
Normal mode; bus dominant;
VTXD = 0 V; VSLP_N = 5 V;
VBAT = 12 V
5
2.5
150
2.5
[2] 100
200
1
-
18
V
7
10
A
400
1200
A
7
10
A
300
1000
A
800
1600
A
2
4
mA
Vth(POR)L
LOW-level power-on reset power-on reset
threshold voltage
1.6
3.1
3.9
V
Vth(POR)H
HIGH-level power-on reset
threshold voltage
2.3
3.4
4.3
V
Vhys(POR)
power-on reset hysteresis
voltage
[2] 0.05
0.3
1
V
Vth(VBATL)L
LOW-level VBAT LOW
threshold voltage
3.9
4.4
4.7
V
Vth(VBATL)H
HIGH-level VBAT LOW
threshold voltage
4.2
4.7
4.9
V
Vhys(VBATL)
VBAT LOW hysteresis
voltage
[2] 0.15
0.3
0.6
V
Pins TXD and SLP_N
VIH
HIGH-level input voltage
VIL
LOW-level input voltage
Vhys
hysteresis voltage
Rpd
pull-down resistance
on TXD
on SLP_N
2
-
7
V
0.3
-
+0.8
V
[2] 50
200
400
mV
50
125
325
k
100
250
650
k
Pin RXD (open-drain)
IOL
LOW-level output current VRXD = 0.4 V
ILH
HIGH-level leakage
current
2
-
[2] 5
-
-
mA
+5
A
TJA1029
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 January 2013
© NXP B.V. 2013. All rights reserved.
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