DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

TISP4250M3AJ(2005) Просмотр технического описания (PDF) - Bourns, Inc

Номер в каталоге
Компоненты Описание
производитель
TISP4250M3AJ
(Rev.:2005)
Bourns
Bourns, Inc Bourns
TISP4250M3AJ Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TISP4xxxM3AJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Repetitive peak off-
IDRM state current
VD = VDRM
V(BO) Breakover voltage
dv/dt = ±250 V/ms, R SOURCE = 300
Impulse breakover
V(BO) voltage
dv/dt ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I(BO)
VT
IH
dv/dt
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
dv/dt = ±250 V/ms, R SOURCE = 300
I T = ±5 A, tW = 100 µs
I T = ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V DRM
Min Typ Max
TA = 25 °C
±5
TA = 85 °C
±10
‘4070
±70
‘4080
±80
‘4090
±90
‘4095
±95
‘4115
±115
‘4125
±125
‘4145
±145
‘4165
±165
‘4180
±180
‘4200
±200
‘4220
±220
‘4240
±240
‘4250
±250
‘4265
±265
‘4290
±290
‘4300
‘4320
±300
±320
‘4350
±350
‘4360
±360
‘4395
±395
‘4070
±78
‘4080
±88
‘4090
±98
‘4095
±102
‘4115
±122
‘4125
±132
‘4145
±151
‘4165
±171
‘4180
±186
‘4200
±207
‘4220
±227
‘4240
±247
‘4250
±257
‘4265
±272
‘4290
±298
‘4300
‘4320
±308
±328
‘4350
±359
‘4360
±370
‘4395
±405
±0.15
±0.6
±3
±0.15
±0.35
±5
Unit
µA
V
V
A
V
A
kV/µs
AUGUST 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]