TISP4150F3 Просмотр технического описания (PDF) - Power Innovations Ltd
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TISP4150F3 Datasheet PDF : 12 Pages
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TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
electrical characteristics for the T and R terminals, TJ = 25°C (continued)
V(BO)
V(BO)
I(BO)
VT
IH
dv/dt
ID
Coff
NOTE
PARAMETER
TEST CONDITIONS
Breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
Impulse breakover volt- dv/dt = ±1000 V/µs, RSOURCE = 50 Ω,
age
di/dt < 20 A/µs
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
di/dt = +/-30 mA/ms
Critical rate of rise of Linear voltage ramp
off-state voltage
Off-state current
Off-state capacitance
Maximum ramp value < 0.85V(BR)MIN
VD = ±50 V
f = 100 kHz, Vd = 100 mV
(see Note 5)
VD = 0,
VD = -5 V
VD = -50 V
5: Further details on capacitance are given in the Applications Information section.
TISP4180F3
MIN TYP MAX
±180
±198
±0.15
±0.15
±0.6
±3
±5
±10
55
95
30
50
15
25
UNIT
V
V
A
V
A
kV/µs
µA
pF
pF
pF
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
TEST CONDITIONS
MIN TYP MAX UNIT
Ptot = 0.8 W, TA = 25°C
5 cm2, FR4 PCB
D Package
SL Package
160
°C/W
105
PARAMETER MEASUREMENT INFORMATION
+i
ITSP
Quadrant I
Switching
Characteristic
V(BR)M
VDRM
VD
-v
I(BR)
V(BR)
IDRM
I(BO)
V(BO)
ITSM
IT
VT
IH
ID
ID
IH
VT
IT
ITSM
V(BO)
I(BO)
IDRM
V(BR)
I(BR)
+v
VD
VDRM
V(BR)M
Quadrant III
Switching
Characteristic
ITSP
-i
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PMXXAA
PRODUCT INFORMATION
3
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