TISP4150F3 Просмотр технического описания (PDF) - Power Innovations Ltd
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TISP4150F3 Datasheet PDF : 12 Pages
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TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings
RATING
‘4125F3
Repetitive peak off-state voltage (0°C < TJ < 70°C)
‘4150F3
‘4180F3
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
D Package
50 Hz, 1 s
SL Package
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
SYMBOL
VDRM
ITSP
ITSM
diT/dt
TJ
Tstg
VALUE
± 100
± 120
± 145
UNIT
V
350
175
120
60
50
38
50
50
45
35
4
6
250
-40 to +150
-40 to +150
A
A rms
A/µs
°C
°C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < TJ <70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, TJ = 25°C
PARAMETER
TEST CONDITIONS
TISP4125F3
MIN TYP MAX
IDRM
V(BO)
V(BO)
I(BO)
VT
IH
dv/dt
ID
Coff
Repetitive peak off-
state current
Breakover voltage
Impulse breakover volt-
age
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
VD = ±VDRM, 0°C < TJ < 70°C
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
dv/dt = ±1000 V/µs, RSOURCE = 50 Ω,
di/dt < 20 A/µs
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
di/dt = +/-30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V(BR)MIN
VD = ±50 V
f = 100 kHz, Vd = 100 mV
(see Note 4)
VD = 0,
VD = -5 V
VD = -50 V
±0.15
±0.15
±5
±143
55
30
15
±10
±125
±0.6
±3
±10
95
50
25
NOTE 4: Further details on capacitance are given in the Applications Information section.
TISP4150F3
MIN TYP MAX
±10
±150
±168
±0.15
±0.6
±3
±0.15
±5
±10
55
95
30
50
15
25
UNIT
µA
V
V
A
V
A
kV/µs
µA
pF
pF
pF
electrical characteristics for the T and R terminals, TJ = 25°C
IDRM
PARAMETER
Repetitive peak off-
state current
TEST CONDITIONS
VD = ±VDRM, 0°C < TJ < 70°C
TISP4180F3
MIN TYP MAX
±10
UNIT
µA
PRODUCT INFORMATION
2
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