TIPP31A Просмотр технического описания (PDF) - Power Innovations Ltd
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TIPP31A Datasheet PDF : 6 Pages
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TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
Collector-emitter
ICES cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 5 mA
(see Note 4)
VCE = 40 V
VCE = 60 V
VCE = 80 V
VCE = 100 V
VCE = 30 V
VCE = 60 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 375 mA
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = 1 A
IC = 2 A
IC = 2 A
IC = 2 A
IC = 0.5 A
IC = 0.5 A
TIPP31
40
TIPP31A
60
TIPP31B
80
TIPP31C
100
TIPP31
0.2
TIPP31A
0.2
TIPP31B
0.2
TIPP31C
0.2
TIPP31/31A
0.3
TIPP31B/31C
0.3
1
20
(see Notes 4 and 5)
10
(see Notes 4 and 5)
1
(see Notes 4 and 5)
1.5
f = 1 kHz
20
f = 1 MHz
3
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
PRODUCT INFORMATION
2
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