TIM1011-10L Просмотр технического описания (PDF) - Toshiba

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TIM1011-10L

MICROWAVE POWER GaAs FET

Toshiba 

TIM1011-10L

ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )

CHARACTERISTICS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation (Tc= 25 °C)

Channel Temperature

Storage Temperature

SYMBOL

VDS

VGS

IDS

PT

Tch

Tstg

UNIT

V

V

A

W

°C

°C

PACKAGE OUTLINE (2-11C1B)

RATING

15

-5

11.5

60

175

-65 to +175

Unit in mm

(1) Gate

(2) Source

(3) Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

2

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