TIC106N Просмотр технического описания (PDF) - Comset Semiconductors
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TIC106N Datasheet PDF : 3 Pages
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SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
• 5 A Continuous On-State Current
• 30 A Surge-Current
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 200 µA
• Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
ABCDEMSN
VDRM
Repetitive peak off-state voltage
(see Note1)
100 200 300 400 500 600 700 800 V
VRRM
IT(RMS)
Repetitive peak reverse voltage
100 200 300 400 500 600 700 800 V
Continuous on-state current at (or below)
80°C case temperature (see note2)
5
A
Average on-state current (180° conduction
IT(AV)
angle) at(or below) 80°C case temperature
3.2
A
(see Note3)
ITM
Surge on-state current (see Note4)
30
A
IGM
Peak positive gate current (pulse width
≤300 µs)
0.2
A
PGM
Peak power dissipation (pulse width ≤300
µs)
1.3
W
PG(AV)
Average gate power dissipation (see
Note5)
0.3
W
TC
Operating case temperature range
-40 to +110
°C
Tstg
Storage temperature range
-40 to +125
°C
TL
Lead temperature 1.6 mm from case for 10
seconds
230
°C
Notes:
1. These values apply when the gate-cathode resistance RGK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to
zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 80°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
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