TIC106N(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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Компоненты Описание

производитель

TIC106N
(Rev.:2012)

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

Comset Semiconductors 

SEMICONDUCTORS

TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,

TIC106N, TIC106S

Notes:

1. These values apply when the gate-cathode resistance RGK = 1kΩ

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to

zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with

resistive load. Above 80°C derate linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated

value of peak reverse voltage and on-state current. Surge may be repeated after the device has

returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

6. This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-

sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch)

from de device body.

MECHANICAL DATA CASE TO-220

29/10/2012

COMSET SEMICONDUCTORS

3|4

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