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TIC225N Просмотр технического описания (PDF) - Power Innovations Ltd

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TIC225N
POINN
Power Innovations Ltd POINN
TIC225N Datasheet PDF : 6 Pages
1 2 3 4 5 6
TYPICAL CHARACTERISTICS
TIC225 SERIES
SILICON TRIACS
JULY 1975 - REVISED MARCH 1997
HOLDING CURRENT
vs
CASE TEMPERATURE
TC07AD
100
Vsupply
+
-
10
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
TC07AC
10
1
1
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 3.
LATCHING CURRENT
vs
CASE TEMPERATURE
TC07AE
100
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
10
0·1
IA = 0
TC = 25 °C
QUADRANT 1
0·01
0·0001
0·001
0·01
0·1
1
IGF - Gate Forward Current - A
Figure 4.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
100
TI07AA
TC 70°C
10 No Prior Device Conduction
Gate Control Guaranteed
1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 5.
1
1
10
100
1k
Consecutive 50-Hz Half-Sine-Wave Cycles
Figure 6.
PRODUCT INFORMATION
3

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