TGS2313 Просмотр технического описания (PDF) - TriQuint Semiconductor
Номер в каталоге
Компоненты Описание
производитель
TGS2313 Datasheet PDF : 9 Pages
| |||
TGS2313
TABLE I
MAXIMUM RATINGS
Symbol
V+
V-
I+
Parameter 1/
Positive Supply Voltage
Negative Supply Voltage
Positive Supply Current (Quiescent)
PIN Input Continuous Wave Power
PD Power Dissipated
TM Mounting Temperature (30 Seconds)
TSTG Storage Temperature
Value
+3 V
-3 V
22 mA
24 dBm
0.45 W
320 0C
-65 to 150 0C
Notes
2/, 3/
2/ 3/
3/
3/4/
1/ These ratings represent the maximum operable values for this device.
2/ V+max and I+max are both per bias pad.
3/ Combinations of supply voltage, supply current, input power, and output power shall
not exceed PD.
4/ When operated at this bias condition with a base plate temperature of 70 0C, the
median life is reduced to TBD hours.
TABLE II
FUNCTION TABLE
STATE RF-A
RF-B
RF-C Icontrol- Icontrol- Icontrol-
A
B
C
1
Low- Isolated Isolated +20 mA -20mA -20mA
Loss
2 Isolated Low- Isolated -20mA +20 mA -20mA
Loss
3 Isolated Isolated Low- -20mA -20mA +20 mA
Loss
2
TriQuint Semiconductor Texas: www.triquint.com Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2008
Share Link: 