TGA4517-EPU Просмотр технического описания (PDF) - TriQuint Semiconductor

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производитель

TGA4517-EPU

Ka-Band Power Amplifier

TriQuint Semiconductor 

Advance Product Information

June 4, 2004

TGA4517-EPU

TABLE I

ABSOLUTE MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Vg

Id

Ig

PIN

PD

TCH

TM

TSTG

Drain Voltage

Gate Voltage Range

Drain Current (Under RF Drive)

Gate Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

8V

-3 TO 0 V

4A

141 mA

TBD

18.3 W

150 0C

320 0C

-65 to 150 0C

2/

2/ 3/

3/

2/ 4/

5/ 6/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.

3/ Total current for the entire MMIC.

4/ When operated at this bias condition (with RF applied) at a base plate temperature of 70 0C, the

median life is 1E+6 hrs.

5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possible

levels.

6/ These ratings apply to each individual FET.

TABLE II

DC PROBE TESTS

(Ta = 25 0C, Nominal)

SYMBOL

PARAMETER

VBVGD,Q1-Q2 Breakdown Voltage Gate-Drain

VBVGD,Q15-Q30 Breakdown Voltage Gate-Drain

VP,Q15-Q30

Pinch-Off Voltage

Each FET Cell is 750um

MIN.

-30

-30

-1.5

TYP.

-14

-14

-1

MAX.

-11

-11

-0.5

UNITS

V

V

V

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2

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