TGA2508-EPU-SM Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGA2508-EPU-SM Datasheet PDF : 10 Pages
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Advance Product Information
January 12, 2004
TGA2508-EPU-SM
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
PARAMETER
V+
Positive Supply Voltage
V-
Negative Supply Voltage Range
I+
Positive Supply Current (Quiescent)
| IG | Gate Supply Current
PIN
PD
TCH
TM
TSTG
TCASE
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
Package Operating Temperature
VALUE
8V
-2 to 0 V
591 mA
16 mA
17 dBm
4.7 W
150 0C
250 0C
-65 to 150 0C
-40 to 110 0C
NOTES
4/
4/
3/ 4/
1/ 2/
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is
4.3E+6 hrs.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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