TGA2508-EPU Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGA2508-EPU Datasheet PDF : 10 Pages
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Advance Product Information
August 4, 2004
TGA2508-EPU
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25oC ± 5oC)
PARAMETER
Drain Operating
Quiescent Current
Small Signal Gain
Input Return Loss (Linear Small Signal)
Output Return Loss (Linear Small Signal
Output Power @ 1 dB Compression Gain @ 15GHz
TYPICAL
7
433
30
17
7
30
UNITS
V
mA
dB
dB
dB
dBm
TABLE III
THERMAL INFORMATION*
PARAMETER
RθJC Thermal Resistance
(channel to backside of
carrier)
TEST CONDITIONS
TCH
(OC)
Vd = 7 V
ID = 433 mA
Pdiss = 3.031 W
105.92
RTJC
(qC/W)
TM
(HRS)
11.85
6.4E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
* This information is a result of a thermal model.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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