TGF4250-EEU Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGF4250-EEU Datasheet PDF : 7 Pages
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TGF4250-EEU
PREDICTED CHANNEL
TEMPERATURE VS.
CARRIER BASE
TEMPERATURE
at 2.04 W and 4.08 W
dissipated power
350
300
250
200
150
100
50
0
-50
-100
p
2.04 W
4.08 W
-50
0
50
100
150
200
Carrier Base T emperature (°C)
38 µm AuSn solder attach to 0.5 mm CuMo Carrier.
HFET CHANNEL
TEMPERATURE VS.
MEDIAN LIFE
325
300
275
250
225
200
175
150
125
100
1
2
3
4
5
6
7
8
9 10
Median Life (10^X Hours) 11415 years
Median Life (10^ x Hours)
4
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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