TGF4250-EEU Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGF4250-EEU Datasheet PDF : 7 Pages
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TGF4250-EEU
GAIN VS.
INPUT POWER
DRAIN CURRENT
VS. INPUT POWER
11
F =8.5GHz
VD=8.0V
I Q=200 mA
TA =25°C
10
9
8
7
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
0.6
0.55
0.5
F =8.5GHz
VD=8.0V
I Q=200 mA
TA =25°C
0.45
0.4
0.35
0.3
0.25
0.2
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
ABSOLUTE MAXIMUM
RATINGS
Drain - to- source voltage, VDS ................................................................................................................ 12 V
Gate - to- source voltage, VGS ........................................................................................................ -5 V to 0 V
Mounting temperatur e (30 sec), TM .................................................................................................. 320 C
Storage temperature range, TSTG ............................................................................................ - 65 to 200 C
Power dissipation, PD ................................................................................. (see thermal data on next page)
Operating channel temperature, TCH ............................................................ (see thermal data on next page)
Ratings over operating channel temperature (unless otherwise noted)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “RF and DC Characteristics” is not implied. Exposure to absolute maximum rated conditions
for extended periods may affect device reliability.
3
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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