TGF4250-EEU Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGF4250-EEU Datasheet PDF : 7 Pages
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TGF4250-EEU
EXAMPLE OF
DC I-V CURVES
p
1.1
1
VG = 0.0 to -2.25 V
0.9
(0.25 V steps)
T A=65° C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
Drain Voltage (V)
OUTPUT POWER
VS. INPUT POWER
36
F =8.5 GHz
34
VD=8.0 V
I Q=200 mA*
T A =25° C
32
30
28
26
24
22
20
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
* IQ is defined as the drain current before application of RF signal at the input.
POWER ADDED
EFFICIENCY VS.
INPUT POWER
55
F =8.5 GHz
50
VD=8.0 V
I Q=200 mA
45
T A =25° C
40
35
30
25
20
15
10
5
0
10 12 14 16 18 20 22 24 26 28
Input Power (dBm)
2
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