TGF4250-EEU Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGF4250-EEU Datasheet PDF : 7 Pages
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T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGF4250-EEU
4250 4.8 mm Discrete HFET
q 4800 µm x 0.5 µm HFET
q Nominal Pout of 34- dBm at 8.5- GHz
q Nominal Gain of 8.5- dB at 8.5- GHz
q Nominal PAE of 53% at 8.5 - GHz
q Suitable for high reliability applications
q 0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field
Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and
Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE.
Bond pad and backside metalization is gold plated for compat ibility with eutectic alloy attach
methods as well as thermocompr ession and thermosonic wire-bonding processes. The TGF4250-EEU
is readily assembled using automatic equipment.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
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