TGC1439A Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGC1439A Datasheet PDF : 5 Pages
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Advance Product Information
May 3, 2000
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
TGC1439A
Symbol
V-
I+
PD
PIN
TCH
TM
TSTG
Parameter
Control Voltage
Control Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
-8 V
1 mA
0.1 W
20 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol
IL
IRL
ORL
PS
Parameter
Insertion Loss
Input Return
Loss
Output Return
Loss
Phase Shift
Test Condition
Vctnl=0V / -2.5V
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
State 31
Limit
Min Nom Max
-5.5 -4.6 -4.0
-16 -11
-14 -11
342 344 350
Units
dB
dB
dB
deg
1200
1000
800
600
400
200
0
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz Reference State Insertion Loss (dB)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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