TGC1411-EPU Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGC1411-EPU Datasheet PDF : 5 Pages
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Advance Product Information
VD
100 pF
RF
IN
IF
OUT
LO
IN
Reflow process assembly notes:
Chip Assembly and Bonding Diagram
• AuSn (80/20) solder with limited exposure to temperatures at or above 300♣C
• alloy station or conveyor furnace with reducing atmosphere
• no fluxes should be utilized
• coefficient of thermal expansion matching is critical for long-term reliability
• storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
• vacuum pencils and/or vacuum collets preferred method of pick up
• avoidance of air bridges during placement
• force impact critical during auto placement
• organic attachment can be used in low-power applications
• curing should be done in a convection oven; proper exhaust is a safety concern
• microwave or radiant curing should not be used because of differential heating
• coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
• thermosonic ball bonding is the preferred interconnect technique
• force, time, and ultrasonics are critical parameters
• aluminum wire should not be used
• discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
• maximum stage temperature: 200♣C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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