TGC1411-EPU Просмотр технического описания (PDF) - TriQuint Semiconductor
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TGC1411-EPU Datasheet PDF : 5 Pages
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Advance Product Information
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
8V
80 mA
0.64 W
14 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Symbol
VP Test FET
BVTest FET
BVTest FET
Parameter
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
-1.5
-30
-30
Maximum
-0.5
-8
-8
Value
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol Parameter
G
ILO
P1dB
Conversion
Gain
LO Isolation
Output P1dB
IDC DC Current
Test Condition
Vd=5V, LO=-5dBm
FRF = 1.0 GHz
FLO = 1.6 GHz
FLO = 1.6 GHz
FRF = 1.0 GHz
FLO = 1.6 GHz
Limit
Min Nom
13 16
- -30
-5 -1
- 26
Max
20
-20
-
35
Units
dB
dB
dB
dBm
mA
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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