TGA8399B-SCC Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGA8399B-SCC

6-13 GHz Low Noise Amplifier

TriQuint Semiconductor 

NOTE

TEST

1/ Small Signal Gain

TABLE III

RF CHARACTERISTICS

(TA = 25°C + 5°C)

Product Data Sheet

October 14, 2005

TGA8399B-SCC

MEASUREMENT

CONDITIONS

Self Bias, Vd=5V

VALUE

UNITS

MIN TYP MAX

F = 6 - 13 GHz

23

26

dB

Power Output

F = 6 - 13 GHz

@ 1 dB Gain Compression

2/ Noise Figure

F = 6 - 13 GHz

F = 10 GHz

1/ Input Return Loss Magnitude F = 6 - 13 GHz

1/ Output Return Loss

Magnitude

F = 6 - 13 GHz

1/ RF probe data is taken at 1 GHz steps

2/ RF probe data is taken at 10 GHz.

11

dBm

2.0

dB

2.5

dB

-18 -9.5 dB

-18 -9.5 dB

TABLE IV

THERMAL INFORMATION

PARAMETER

TEST

CONDITIONS

RθJC Thermal Resistance Vd = 5 V

(channel to backside of ID = 65 mA

carrier)

Pdiss = 0.325 W

TCH

RTJC

TM

(OC) (qC/W) (HRS)

82.14 37.354 9.2E+8

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier

at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC

power is dissipated.

3

TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

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