TFR3N Просмотр технического описания (PDF) - Toshiba
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TFR3N Datasheet PDF : 4 Pages
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TOSHIBA Fast Recovery Diode Silicon Diffused Type
TFR3N,TFR3T
TFR3N,TFR3T
Strobe Flasher Applications (Fast Recovery)
• Average forward current: IF (AV) = 0.2 A
• Repetitive peak reverse voltage: VRRM = 1000, 1500 V
• Reverse recovery time: trr = 1.5 μs
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak
reverse voltage
TFR3N
TFR3T
VRRM
1000
1500
V
Average forward current
I2t limit value (t = 1 to 10 ms)
IF (AV)
I2t
0.2
A
0.5
A2s
Peak one cycle surge forward current
(non repetitive)
IFSM
10 (50 Hz)
A
11 (60 Hz)
Junction temperature
Storage temperature range
Tj
−40 to 125
°C
JEDEC
―
Tstg
−40 to 125
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
3-3E1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.225 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Symbol
VFM
IRRM
trr
Test Condition
IFM = 0.1 A
VRRM = Rated
IF = 10 mA, IR = 10 mA
Min Typ. Max Unit
⎯
⎯
1.5
V
⎯
⎯
5
μA
⎯
⎯
1.5
μs
Marking
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
FR3N
FR3T
Part No.
TFR3N
TFR3T
1
2006-11-07
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