TFR2N Просмотр технического описания (PDF) - Toshiba

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производитель

TFR2N

TOSHIBA Fast Recovery Diode Silicon Diffused Type

Toshiba 

TOSHIBA Fast Recovery Diode Silicon Diffused Type

TFR2N, TFR2T

TFR2N,TFR2T

Strobo Flasher Applications (Fast Recovery)

· Average forward current: IF (AV) = 0.5 A

· Repetitive peak reverse voltage: VRRM = 1000, 1500 V

· Reverse-Recovery Time: trr = 4 μs

Unit: mm

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Repetitive peak reverse TFR2N

voltage

TFR2T

Average forward current

I2t limit value (t = 1~10 ms)

Peak one cycle surge forward current

(non-repetitive)

Junction temperature

Storage temperature range

VRRM

IF(AV)

I2t

IFSM

Tj

Tstg

1000

V

1500

0.5

A

2

A2s

20

A

-40~125

°C

-40~125

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Peak forward voltage

Repetitive peak reverse current

Reverse recovery time

Symbol

VFM

IRRM

trr

Test Condition

IFM = 0.5 A

VRRM = Rated

IF = 20 mA, IR = 1 mA

Marking

JEDEC

―

JEITA

―

TOSHIBA

3-3C1A

Weight: 0.3 g (typ.)

Min Max Unit

¾

1.5

V

¾

10

mA

¾

4

ms

Type Code Lot No.

Cathode Mark

Color: Silver

Month of

manufac-

ture

Year of

manufac-

ture

January to December

are denoted by letter A

to L respectively.

Last decimal digit of

the year of

manufacture

Code

FR2N

FR2T

Type

TFR2N

TFR2T

1

2002-08-29

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