TFR1T Просмотр технического описания (PDF) - Toshiba

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производитель

TFR1T

TOSHIBA Fast Recovery Diode Silicon Diffused Type

Toshiba 

TOSHIBA Fast Recovery Diode Silicon Diffused Type

TFR1N, TFR1T

TFR1N,TFR1T

Strobo Flasher Applications (fast recovery)

Unit: mm

· Average Forward Current: IF (AV) = 0.5 A

· Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V

· Reverse Recovery Time: trr = 10 µs

Maximum Ratings

Characteristics

Symbol

Rating

Unit

Repetitive peak

reverse voltage

TFR1N

TFR1T

Average forward current

I2t limit value (t = 1 to 10 ms)

Peak one cycle surge forward current

(non repetitive)

Junction temperature

Storage temperature range

VRRM

IF (AV)

I2t

IFSM

Tj

Tstg

1000

V

1500

0.5

A

2

A2s

20

A

-40 to 125

°C

-40 to 125

°C

JEDEC

DO-41

JEITA

―

TOSHIBA

3-3C1A

Weight: 0.3 g (typ.)

1

2003-02-17

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