TF541S-A Просмотр технического описания (PDF) - Sanken Electric co.,ltd.
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TF541S-A Datasheet PDF : 1 Pages
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TO-220F 5A High sensitive Thyristor
TF541S-A,TF561S-A
s Features
qRepetitive peak off-state voltage: VDRM=400, 600V
qAverage on-state current: IT(AV)=5A
qHigh sensitive Gate trigger current: IGT=0.2mA max
qIsolation voltage: VISO=1500V (50Hz Sine wave, RMS )
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
VDRM
VRRM
VDSM
VRSM
IT(AV)
IT(RMS)
ITSM
IFGM
VFGM
VRGM
PGM
PG (AV)
Tj
Tstg
VISO
Ratings
TF541S-A
TF561S-A
400
600
400
600
500
700
500
700
5.0
7.8
80
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
1500
External Dimensions
(Unit: mm)
φ3.3±0.2 10.0±0.2
4.2±0.2
2.8 C 0.5
a
b
1.35±0.15
1.35±0.15
0.85 +– 00..12
2.54
2.54 0.45 +–00..12
2.4±0.2
2.2±0.2
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
V
Conditions
Tj= – 40 to +125°C, RGK =470Ω
50Hz Half-cycle sinewave, Continuous current, Tc=88°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Symbol
min
Off-state current
IDRM
Reverse current
IRRM
On-state voltage
VTM
Gate trigger voltage
VGT
Gate trigger current
IGT
Gate non-trigger voltage
VGD
0.1
Holding current
IH
Critical rate-of-rise of off-state voltage dv/dt
Turn-off time
tq
Thermal resistance
Rth
Ratings
typ
0.03
4.0
20
30
max
2.0
2.0
1.4
1.5
0.2
4.0
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/ W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ
TC=25°C, ITM=10A
VD=6V, RL=10Ω, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ
RGK=1kΩ, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF
Tc=25°C
Junction to case
20
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