TEA1205 Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

производитель

TEA1205

High efficiency DC/DC converter

Philips Electronics 

Philips Semiconductors

High efficiency DC/DC converter

Preliminary specification

TEA1205AT

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Timing

fsw

switching frequency

tres

response time from standby to

Pmax

fsync

synchronisation input frequency

Temperature

Tamb

Tmax

operating ambient temperature

internal cut-off temperature

Digital levels

VlL

LOW-level input voltage pins

1, 2, 7 and 8

VIH

HIGH-level input voltage pin 1 note 2

VIH

HIGH-level input voltage pin 2 notes 2 and 3

VIH

HIGH-level input voltage pin 8 notes 2 and 3

Sense pin resistance

RSENSE

SENSE pin resistance to GND up to 3.3 V mode

up to 5.0 V mode

150

200 240

kHz

−

25

−

µs

−

13

−

MHz

−20

+25 +80

°C

150

165 180

°C

0

−

V3 − 0.4 −

2.0

−

2.9

−

0.4

V

V3 + 0.3 V

V3 + 0.3 V

V3 + 0.3 V

437.2 546.5 655.8 kΩ

662.2 827.8 993.4 kΩ

Notes

1. The NFET current limit is set by an external 1% accurate resistor Rlim connected between pin 7 and pin 6 (ground).

The typical maximum instantaneous current is defined as: Ilim = 890 V/ Rlim so the use of Rlim = 315 Ω will lead to a

typical maximum current value of 2.83 A. The average inductor current during current limit also depends on

inductance value and resistive losses in all components in the power path. In normal application and when using

Rlim = 315 Ω, the average inductor current will be limited to 2.3 A typical.

2. V3 is the voltage at pin 3 (OUT).

3. If the applied high level is less than V3 − 1 V, the quiescent current level of the device will increase. The maximum

increase is 300 µA in the event that pin 2 is at 2.0 V.

1998 Mar 24

9

Share Link: